Project Description

Degenerate semiconductors are referred as the special class of materials with novel electronic structure originates from the heavily doped charge carriers forms energy bands with in the conduction band or valance band. As a result the Fermi level shift and lies within the conduction band (n-type) or valance band (p-type). Layered transition metal dichalcogenides (TMDs) compounds MX2 (M=Mo, W, Te and X=S, Se) are emerged as potential candidates for electronic and energy applications. The current research strategy rely on the improving the functional properties of 2D layered materials by transition metal doping. In view of expending potentials of 2D materials for multifunctional purpose, the present proposal is developed to explore of the 2D layered materials use in electronic, optoelectronic, spintronic and energy related applications by degenerate doping